mar-05-2001 1 bar 63-02l 1 2 silicon pin diode preliminary data pin diode for high speed switching of rf signals very low forward resistance (low insertion loss) very low capacitance (high isolation) small inductance for frequencies up to 3ghz ultra small leadless package 12 eha07001 type marking pin configuration package bar 63-02l g 1 = c 2 = a - tslp-2 maximum ratings parameter symbol value unit diode reverse voltage v r 50 v forward current i f 100 ma total power dissipation t s = tbd p tot tbd mw operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150 thermal resistance parameter symbol value unit junction - ambient 1) r thja tbd k/w junction - soldering point r thjs tbd 1 package mounted on alumina 15mm x 16.7mm x o.7mm
mar-05-2001 2 bar 63-02l electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 50 - - v reverse current v r = 35 v i r - - 10 na forward voltage i f = 100 ma v f - 0.95 1.2 v ac characteristics diode capacitance v r = 0 v, f = 100 mhz v r = 5 v, f = 1 mhz c t - - 0.3 0.21 - 0.3 pf forward resistance i f = 5 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - 1.2 1 2 - charge carrier life time i f = 10 ma, i r = 6 ma, i r = 3 ma rr - 75 - ns case capacitance f = 1 mhz c c - 0.05 - pf series inductance l s - 0.6 - nh
mar-05-2001 3 bar 63-02l diode capacitance c t = ( v r ) f = 1mhz v ehd07139 r t c 0 0v pf 0.1 0.2 0.3 0.4 0.5 10 20 30 forward resistance r f = ( i f ) f = 100mhz ehd07138 f f r ? 10 -2 -1 10 ma 10 -1 10 0 10 1 10 2 10 2 10 0 10 1 forward current i f = ( v f ) t a = 25c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v 1 v f -2 10 -1 10 0 10 1 10 2 10 3 10 ma i f
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